Informatics and Applications
2025, Volume 19, Issue 3, pp 55-66
MULTIOPTION REDUNDANCY TAKING INTO ACCOUNT LOGICAL AND TOPOLOGICAL FEATURES OF TRANSISTOR CIRCUIT
- S. F. Tyurin
- M. S. Nikitin
- Yu. A. Stepchenkov
- Yu. G. Diachenko
Abstract
Passive fault tolerance of digital cells and devices is considered using multioption reliability taking into account features of the transistor redundancy topological simulation. A model is built that includes channel majority redundancy with the majority voters redundancy, allowing for the channel "collapse" during diagnostics, deep redundancy with redundancy at the level of individual channel's layers with special majority voters that ensure the configuration of layers into channels. The known methods are combined in a relationship that optimizes a given objective function with the required constraints. In addition, redundancy is used at the individual transistor level with varying degrees of failure protection. The topological features of such reservation are investigated by constructing various variants of circuits based on disjunctive normal, conjunctive normal, and intermediate forms. The power of the set of such variants is established. A method for searching for the topologically best variant with a large device dimension is proposed. By means of topological modeling, the preferred backup option is established based on the indicator of the consumed power and the switching delay product. Parameters examples of created topologies are given.
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[+] About this article
Title
MULTIOPTION REDUNDANCY TAKING INTO ACCOUNT LOGICAL AND TOPOLOGICAL FEATURES OF TRANSISTOR CIRCUIT
Journal
Informatics and Applications
2025, Volume 19, Issue 3, pp 55-66
Cover Date
2025-10-10
DOI
10.14357/19922264250307
Print ISSN
1992-2264
Publisher
Institute of Informatics Problems, Russian Academy of Sciences
Additional Links
Key words
fault tolerance; redundancy; majority voter; topological simulation
Authors
S. F. Tyurin  ,  , M. S. Nikitin , Yu. A. Stepchenkov  , and Yu. G. Diachenko
Author Affiliations
Perm National Research Polytechnic University, 7 Prof. Pozdeev Str., Perm 614013, Russian Federation
Perm State University, 15 Bukireva Str., Perm 614990, Russian Federation
Federal Research Center "Computer Science and Control" of the Russian Academy of Sciences, 44-2 Vavilov Str., Moscow 119333, Russian Federation
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